Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF540STRLPBF MOSFET N-CH 100V 28A D2PAK Vishay Siliconix	25,037 In Stock	1 : ¥13.05000 Cut Tape (CT) 800 : ¥7.78700 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	28A (Tc)	10V	77mOhm @ 17A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	1700 pF @ 25 V	-	3.7W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI7489DP-T1-E3 MOSFET P-CH 100V 28A PPAK SO-8 Vishay Siliconix	48,049 In Stock	1 : ¥21.02000 Cut Tape (CT) 3,000 : ¥9.48427 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	28A (Tc)	4.5V, 10V	41mOhm @ 7.8A, 10V	3V @ 250µA	160 nC @ 10 V	±20V	4600 pF @ 50 V	-	5.2W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
UJ4SC075018B7S 750V/18MOHM, N-OFF SIC STACK CAS Qorvo	2,085 In Stock	1 : ¥146.30000 Cut Tape (CT) 800 : ¥86.20295 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	72A (Tc)	12V	23mOhm @ 50A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1414 pF @ 400 V	-	259W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.