Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedToshiba Semiconductor and StorageVishay Siliconix
Series
-TrenchFET®U-MOSIIIU-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)7.6A (Tc)10.3A (Ta)80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 40A, 10V13mOhm @ 10A, 10V29mOhm @ 5.4A, 10V47mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA2.1V @ 300µA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.8 nC @ 4.5 V36 nC @ 10 V41 nC @ 10 V68.6 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 10 V1295 pF @ 15 V3426 pF @ 20 V3900 pF @ 15 V
Power Dissipation (Max)
500mW (Ta)1W (Ta)1.25W (Ta), 2.5W (Tc)104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)175°C
Supplier Device Package
8-TSON Advance (3.1x3.1)ES6POWERDI3333-8SOT-23-3 (TO-236)
Package / Case
8-PowerVDFNSOT-563, SOT-666TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2369DS-T1-GE3
MOSFET P-CH 30V 7.6A TO236
Vishay Siliconix
33,166
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥1.10687
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
7.6A (Tc)
4.5V, 10V
29mOhm @ 5.4A, 10V
2.5V @ 250µA
36 nC @ 10 V
±20V
1295 pF @ 15 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerDI3333-8
DMP4013LFG-7
MOSFET P-CH 40V 10.3A PWRDI3333
Diodes Incorporated
58,483
In Stock
1 : ¥7.31000
Cut Tape (CT)
2,000 : ¥2.76880
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
10.3A (Ta)
4.5V, 10V
13mOhm @ 10A, 10V
3V @ 250µA
68.6 nC @ 10 V
±20V
3426 pF @ 20 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
43,446
In Stock
1 : ¥11.17000
Cut Tape (CT)
5,000 : ¥2.75528
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
80A (Tc)
4.5V, 10V
1.6mOhm @ 40A, 10V
2.1V @ 300µA
41 nC @ 10 V
±20V
3900 pF @ 15 V
-
104W (Tc)
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
0
In Stock
1 : ¥5.25000
Cut Tape (CT)
4,000 : ¥1.16452
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4.5V
47mOhm @ 2A, 4.5V
1V @ 1mA
10.8 nC @ 4.5 V
±10V
510 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
ES6
SOT-563, SOT-666
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of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.