Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)40A (Tj)
Rds On (Max) @ Id, Vgs
2.8mOhm @ 20A, 10V5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 30µA3.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs
30.5 nC @ 10 V52 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 30 V2800 pF @ 25 V
Supplier Device Package
PG-TSDSON-8PG-TSDSON-8-33
Package / Case
8-PowerTDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
IPZ40N04S5L2R8ATMA1
MOSFET N-CH 40V 40A 8TSDSON
Infineon Technologies
28,103
In Stock
1 : ¥9.69000
Cut Tape (CT)
5,000 : ¥3.82779
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
40A (Tc)
4.5V, 10V
2.8mOhm @ 20A, 10V
2V @ 30µA
52 nC @ 10 V
±16V
2800 pF @ 25 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TSDSON-8
8-PowerVDFN
IAUZ40N06S5N050ATMA1
IAUZ40N06S5N050ATMA1
MOSFET N-CH 60V 40A TSDSON-8-33
Infineon Technologies
9,659
In Stock
1 : ¥10.84000
Cut Tape (CT)
5,000 : ¥4.27622
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tj)
-
5mOhm @ 20A, 10V
3.4V @ 29µA
30.5 nC @ 10 V
±20V
2200 pF @ 30 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-33
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.