Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
260mA (Ta)630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
400mOhm @ 600mA, 4.5V2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 4.5 V0.81 nC @ 5 V
Vgs (Max)
±6V±20V
Input Capacitance (Ciss) (Max) @ Vds
26.7 pF @ 25 V60.67 pF @ 16 V
Power Dissipation (Max)
280mW (Ta)300mW (Tj)
Supplier Device Package
SOT-23-3 (TO-236)SOT-523
Package / Case
SOT-523TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002ET1G
MOSFET N-CH 60V 260MA SOT23-3
onsemi
437,705
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.32433
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
260mA (Ta)
4.5V, 10V
2.5Ohm @ 240mA, 10V
2.5V @ 250µA
0.81 nC @ 5 V
±20V
26.7 pF @ 25 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-523
DMG1012T-7
MOSFET N-CH 20V 630MA SOT-523
Diodes Incorporated
327,133
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.42139
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.