Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
HEXFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
55 V60 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)120A (Tc)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 75A, 10V80mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 25 V4520 pF @ 50 V
Power Dissipation (Max)
8W (Tc)230W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-223TO-220AB
Package / Case
TO-220-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT223
BUK7880-55A/CUX
MOSFET N-CH 55V 7A SOT223
Nexperia USA Inc.
13,067
In Stock
1 : ¥4.10000
Cut Tape (CT)
1,000 : ¥1.55403
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
7A (Tc)
10V
80mOhm @ 10A, 10V
4V @ 1mA
12 nC @ 10 V
±20V
500 pF @ 25 V
-
8W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO-220AB PKG
IRFB3306PBF
MOSFET N-CH 60V 120A TO220AB
Infineon Technologies
5,593
In Stock
1 : ¥14.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
120A (Tc)
10V
4.2mOhm @ 75A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4520 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.