Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-OptiMOS™TrenchFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)8A (Ta), 40A (Tc)18.6A (Ta), 70.6A (Tc)31.8A (Ta), 130A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
0.75mOhm @ 150A, 10V2.8mOhm @ 20A, 10V6.5mOhm @ 10A, 10V16mOhm @ 20A, 10V6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA2.5V @ 250µA2.6V @ 1mA3.3V @ 280µA3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V66 nC @ 10 V135 nC @ 10 V287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 25 V1700 pF @ 50 V2930 pF @ 40 V7250 pF @ 40 V16000 pF @ 30 V
Power Dissipation (Max)
225mW (Ta)2.1W (Ta), 63W (Tc)5W (Ta), 71.4W (Tc)6.25W (Ta), 104W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-HSOF-8-1PG-TSDSON-8PowerPAK® SO-8SOT-23-3 (TO-236)
Package / Case
8-PowerSFN8-PowerTDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
onsemi
272,283
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.49111
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 100mA, 10V
2.6V @ 1mA
-
±20V
20 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSZ160N10NS3GATMA1
MOSFET N-CH 100V 8A/40A 8TSDSON
Infineon Technologies
41,640
In Stock
1 : ¥12.81000
Cut Tape (CT)
5,000 : ¥5.04048
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8A (Ta), 40A (Tc)
6V, 10V
16mOhm @ 20A, 10V
3.5V @ 12µA
25 nC @ 10 V
±20V
1700 pF @ 50 V
-
2.1W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
PowerPAK SO-8
SIR680LDP-T1-RE3
MOSFET N-CH 80V 31.8A/130A PPAK
Vishay Siliconix
7,084
In Stock
1 : ¥18.47000
Cut Tape (CT)
3,000 : ¥8.31527
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
31.8A (Ta), 130A (Tc)
4.5V, 10V
2.8mOhm @ 20A, 10V
2.5V @ 250µA
135 nC @ 10 V
±20V
7250 pF @ 40 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IPT059N15N3ATMA1
IPT007N06NATMA1
MOSFET N-CH 60V 300A 8HSOF
Infineon Technologies
14,842
In Stock
1 : ¥52.21000
Cut Tape (CT)
2,000 : ¥25.40434
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300A (Tc)
6V, 10V
0.75mOhm @ 150A, 10V
3.3V @ 280µA
287 nC @ 10 V
±20V
16000 pF @ 30 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
PowerPAK SO-8 Single
SIR880BDP-T1-RE3
N-CHANNEL 80-V (D-S) MOSFET POWE
Vishay Siliconix
5,513
In Stock
1 : ¥10.34000
Cut Tape (CT)
3,000 : ¥4.26705
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
18.6A (Ta), 70.6A (Tc)
4.5V, 10V
6.5mOhm @ 10A, 10V
2.4V @ 250µA
66 nC @ 10 V
±20V
2930 pF @ 40 V
-
5W (Ta), 71.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.