Single FETs, MOSFETs

Results: 2
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
57mOhm @ 2.3A, 2.5V150mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
750mV @ 11µA2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs
1.7 nC @ 2.5 V2.3 nC @ 5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
282 pF @ 15 V529 pF @ 10 V
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS806NEH6327XTSA1
MOSFET N-CH 20V 2.3A SOT23-3
Infineon Technologies
63,986
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71242
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.3A (Ta)
1.8V, 2.5V
57mOhm @ 2.3A, 2.5V
750mV @ 11µA
1.7 nC @ 2.5 V
±8V
529 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS315PH6327XTSA1
MOSFET P-CH 30V 1.5A SOT23-3
Infineon Technologies
18,552
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.75396
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
1.5A (Ta)
4.5V, 10V
150mOhm @ 1.5A, 10V
2V @ 11µA
2.3 nC @ 5 V
±20V
282 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.