Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRLML2803TRPBF MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies	132,163 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.80297 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	4.5V, 10V	250mOhm @ 910mA, 10V	1V @ 250µA	5 nC @ 10 V	±20V	85 pF @ 25 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
FQD3P50TM MOSFET P-CH 500V 2.1A DPAK onsemi	4,277 In Stock	1 : ¥11.49000 Cut Tape (CT) 2,500 : ¥4.75942 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	500 V	2.1A (Tc)	10V	4.9Ohm @ 1.05A, 10V	5V @ 250µA	23 nC @ 10 V	±30V	660 pF @ 25 V	-	2.5W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
GAN190-650EBEZ 650 V, 190 MOHM GALLIUM NITRIDE Nexperia USA Inc.	2,234 In Stock	1 : ¥37.93000 Cut Tape (CT) 2,500 : ¥11.69897 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	11.5A (Tc)	6V	190mOhm @ 3.9A, 6V	2.5V @ 12.2mA	2.8 nC @ 6 V	+7V, -1.4V	96 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount, Wettable Flank	DFN8080-8	8-VDFN Exposed Pad
IRF9640SPBF MOSFET P-CH 200V 11A D2PAK Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥25.78000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	11A (Tc)	10V	500mOhm @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1200 pF @ 25 V	-	3W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.