Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesNexperia USA Inc.Vishay Siliconix
Series
-HEXFET®
Product Status
ActiveNot For New DesignsObsolete
Current - Continuous Drain (Id) @ 25°C
5.6A (Tc)10A (Tc)36A (Tc)37A (Tc)68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4V, 5V10V
Rds On (Max) @ Id, Vgs
13.9mOhm @ 15A, 10V26.8mOhm @ 15A, 10V44mOhm @ 18A, 10V185mOhm @ 6A, 10V540mOhm @ 3.4A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 5 V20 nC @ 5 V30 nC @ 10 V59 nC @ 10 V74 nC @ 5 V
Vgs (Max)
±10V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V440 pF @ 25 V1624 pF @ 50 V1800 pF @ 25 V3195 pF @ 50 V
Power Dissipation (Max)
43W (Tc)48W (Tc)103W (Tc)140W (Tc)170W (Tc)
Supplier Device Package
IPAK (TO-251AA)TO-220AB
Package / Case
TO-220-3TO-251-3 Short Leads, IPAK, TO-251AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRL540NPBF
MOSFET N-CH 100V 36A TO220AB
Infineon Technologies
11,462
In Stock
1 : ¥11.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
36A (Tc)
4V, 10V
44mOhm @ 18A, 10V
2V @ 250µA
74 nC @ 5 V
±16V
1800 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPAK (TO-251)
IRLU120NPBF
MOSFET N-CH 100V 10A IPAK
Infineon Technologies
8,107
In Stock
1 : ¥7.22000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Tc)
4V, 10V
185mOhm @ 6A, 10V
2V @ 250µA
20 nC @ 5 V
±16V
440 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220AB
IRL510PBF
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
8,528
In Stock
1 : ¥10.67000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
5.6A (Tc)
4V, 5V
540mOhm @ 3.4A, 5V
2V @ 250µA
6.1 nC @ 5 V
±10V
250 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
PSMN027-100PS,127
MOSFET N-CH 100V 37A TO220AB
Nexperia USA Inc.
13,763
In Stock
1 : ¥14.37000
Tube
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
37A (Tc)
10V
26.8mOhm @ 15A, 10V
4V @ 1mA
30 nC @ 10 V
±20V
1624 pF @ 50 V
-
103W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
PSMN013-100PS,127
MOSFET N-CH 100V 68A TO220AB
Nexperia USA Inc.
0
In Stock
5,000 : ¥8.62358
Tube
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
68A (Tc)
10V
13.9mOhm @ 15A, 10V
4V @ 1mA
59 nC @ 10 V
±20V
3195 pF @ 50 V
-
170W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.