Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFI9530GPBF MOSFET P-CH 100V 7.7A TO220-3 Vishay Siliconix	3,558 In Stock	1 : ¥12.73000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	300mOhm @ 4.6A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	860 pF @ 25 V	-	42W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
TK110A10PL,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	251 In Stock	1 : ¥13.05000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	36A (Tc)	4.5V, 10V	10.8mOhm @ 18A, 10V	2.5V @ 300µA	33 nC @ 10 V	±20V	2040 pF @ 50 V	-	36W (Tc)	175°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
IRLI530GPBF MOSFET N-CH 100V 9.7A TO220-3 Vishay Siliconix	1,489 In Stock	1 : ¥15.27000 Tube	-	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	9.7A (Tc)	4V, 5V	160mOhm @ 5.8A, 5V	2V @ 250µA	28 nC @ 5 V	±10V	930 pF @ 25 V	-	42W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRLD110PBF MOSFET N-CH 100V 1A 4DIP Vishay Siliconix	4,164 In Stock	1 : ¥13.63000 Tube	-	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	1A (Ta)	4V, 5V	540mOhm @ 600mA, 5V	2V @ 250µA	6.1 nC @ 5 V	±10V	250 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.