Single FETs, MOSFETs

Results: 8
Manufacturer
Goford SemiconductorInfineon TechnologiesNexperia USA Inc.Vishay Siliconix
Series
-CoolMOS™ CEGHEXFET®OptiMOS™SIPMOS®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time BuyNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V200 V250 V500 V
Current - Continuous Drain (Id) @ 25°C
375mA (Ta)660mA (Ta)790mA (Tc)960mA (Tc)3.6A (Tc)3.8A (Ta)18A (Tc)25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V10V13V
Rds On (Max) @ Id, Vgs
40mOhm @ 3.8A, 10V60mOhm @ 25A, 10V70mOhm @ 4A, 10V1.5Ohm @ 580mA, 10V1.8Ohm @ 660mA, 10V2Ohm @ 470mA, 10V2Ohm @ 600mA, 13V5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 400µA2V @ 1mA2V @ 250µA2.5V @ 250µA3.5V @ 50µA4V @ 250µA4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V8.2 nC @ 10 V16.1 nC @ 10 V25 nC @ 10 V29 nC @ 10 V48 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 25 V124 pF @ 100 V140 pF @ 25 V357 pF @ 25 V870 pF @ 25 V1446 pF @ 30 V2350 pF @ 100 V
Power Dissipation (Max)
1W (Ta)1.5W (Ta)1.8W (Ta)2W (Ta), 3.1W (Tc)5W (Tc)32W (Tc)125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
8-DFN (3.15x3.05)PG-SOT223-3PG-SOT223-4PG-TDSON-8-1SOT-223
Package / Case
8-PowerTDFN8-PowerVDFNTO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT223-3L
IRLL2705TRPBF
MOSFET N-CH 55V 3.8A SOT223
Infineon Technologies
27,922
In Stock
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.94394
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
3.8A (Ta)
4V, 10V
40mOhm @ 3.8A, 10V
2V @ 250µA
48 nC @ 10 V
±16V
870 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
PG-TDSON-8-1
BSC600N25NS3GATMA1
MOSFET N-CH 250V 25A TDSON-8-1
Infineon Technologies
7,450
In Stock
1 : ¥27.42000
Cut Tape (CT)
5,000 : ¥12.78882
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
25A (Tc)
10V
60mOhm @ 25A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
SOT223
BSP126,115
MOSFET N-CH 250V 375MA SOT223
Nexperia USA Inc.
68,297
In Stock
1 : ¥3.37000
Cut Tape (CT)
1,000 : ¥1.56298
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
250 V
375mA (Ta)
10V
5Ohm @ 300mA, 10V
2V @ 1mA
-
±20V
120 pF @ 25 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
PG-SOT223-3
IPN50R2K0CEATMA1
MOSFET N-CH 500V 3.6A SOT223
Infineon Technologies
10,641
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.36493
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
3.6A (Tc)
13V
2Ohm @ 600mA, 13V
3.5V @ 50µA
6 nC @ 10 V
±20V
124 pF @ 100 V
-
5W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-3
TO-261-4, TO-261AA
SOT223-3L
IRFL210TRPBF
MOSFET N-CH 200V 960MA SOT223
Vishay Siliconix
7,732
In Stock
1 : ¥6.98000
Cut Tape (CT)
2,500 : ¥2.87602
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
960mA (Tc)
10V
1.5Ohm @ 580mA, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
140 pF @ 25 V
-
2W (Ta), 3.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SOT-223-4
BSP297H6327XTSA1
MOSFET N-CH 200V 660MA SOT223-4
Infineon Technologies
10,508
In Stock
1 : ¥7.14000
Cut Tape (CT)
1,000 : ¥3.06332
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
660mA (Ta)
4.5V, 10V
1.8Ohm @ 660mA, 10V
1.8V @ 400µA
16.1 nC @ 10 V
±20V
357 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
G30N04D3
G700P06D3
P-60V,-18A,RD(MAX)<70M@-10V,VTH-
Goford Semiconductor
1,477
In Stock
1 : ¥4.10000
Cut Tape (CT)
5,000 : ¥1.05723
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
18A (Tc)
4.5V, 10V
70mOhm @ 4A, 10V
2.5V @ 250µA
25 nC @ 10 V
±20V
1446 pF @ 30 V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (3.15x3.05)
8-PowerVDFN
SOT223-3L
IRFL214TRPBF-BE3
MOSFET N-CH 250V 790MA SOT223
Vishay Siliconix
2,007
In Stock
1 : ¥16.09000
Cut Tape (CT)
2,500 : ¥4.15827
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
250 V
790mA (Tc)
10V
2Ohm @ 470mA, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
140 pF @ 25 V
-
2W (Ta), 3.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
Showing
of 8

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.