Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF640NPBF MOSFET N-CH 200V 18A TO220AB Infineon Technologies	52,073 In Stock	1 : ¥6.81000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF540NPBF MOSFET N-CH 100V 33A TO220AB Infineon Technologies	135,299 In Stock	1 : ¥7.14000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9640PBF MOSFET P-CH 200V 11A TO220AB Vishay Siliconix	26,127 In Stock	1 : ¥11.33000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	11A (Tc)	10V	500mOhm @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF540PBF MOSFET N-CH 100V 28A TO220AB Vishay Siliconix	31,831 In Stock	1 : ¥11.90000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	28A (Tc)	10V	77mOhm @ 17A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	1700 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9540PBF MOSFET P-CH 100V 19A TO220AB Vishay Siliconix	3,034 In Stock	1 : ¥16.99000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	19A (Tc)	10V	200mOhm @ 11A, 10V	4V @ 250µA	61 nC @ 10 V	±20V	1400 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP460PBF MOSFET N-CH 500V 20A TO247-3 Vishay Siliconix	6,714 In Stock	1 : ¥37.19000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	270mOhm @ 12A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	4200 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SI2303CDS-T1-GE3 MOSFET P-CH 30V 2.7A SOT23-3 Vishay Siliconix	18,940 In Stock	1 : ¥3.53000 Cut Tape (CT) 3,000 : ¥1.19371 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2.7A (Tc)	4.5V, 10V	190mOhm @ 1.9A, 10V	3V @ 250µA	8 nC @ 10 V	±20V	155 pF @ 15 V	-	1W (Ta), 2.3W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQP11N40C MOSFET N-CH 400V 10.5A TO220-3 onsemi	1,559 In Stock 1,000 Factory	1 : ¥9.36000 Tube	QFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10.5A (Tc)	10V	530mOhm @ 5.25A, 10V	4V @ 250µA	35 nC @ 10 V	±30V	1090 pF @ 25 V	-	135W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STP7NK40Z MOSFET N-CH 400V 5.4A TO220AB STMicroelectronics	8,995 In Stock	1 : ¥9.77000 Tube	SuperMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	5.4A (Tc)	10V	1Ohm @ 2.7A, 10V	4.5V @ 50µA	26 nC @ 10 V	±30V	535 pF @ 25 V	-	70W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRF740PBF-BE3 MOSFET N-CH 400V 10A TO220AB Vishay Siliconix	3,735 In Stock	1 : ¥11.33000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 5.3A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1400 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.