Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
60 V80 V
Current - Continuous Drain (Id) @ 25°C
37A (Tc)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 51A, 10V27mOhm @ 10A, 5V
Vgs(th) (Max) @ Id
2.1V @ 1mA4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
17.1 nC @ 5 V86 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
2703 pF @ 25 V2810 pF @ 25 V
Power Dissipation (Max)
95W (Tc)140W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
LFPAK56, Power-SO8TO-220AB
Package / Case
SC-100, SOT-669TO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF1010EZPBF
MOSFET N-CH 60V 75A TO220AB
Infineon Technologies
9,545
In Stock
1 : ¥13.30000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
75A (Tc)
10V
8.5mOhm @ 51A, 10V
4V @ 100µA
86 nC @ 10 V
±20V
2810 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
LFPAK56/POWER-SO8/SOT669
BUK9Y25-80E,115
MOSFET N-CH 80V 37A LFPAK56
Nexperia USA Inc.
2,910
In Stock
1 : ¥7.22000
Cut Tape (CT)
1,500 : ¥3.18497
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
37A (Tc)
5V, 10V
27mOhm @ 10A, 5V
2.1V @ 1mA
17.1 nC @ 5 V
±10V
2703 pF @ 25 V
-
95W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.