Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesTaiwan Semiconductor CorporationVishay Siliconix
Series
-OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V100 V240 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)4.7A (Tc)37A (Ta), 366A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 150A, 10V50mOhm @ 3A, 4.5V4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
800mV @ 250µA2V @ 250µA3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V9.6 nC @ 4.5 V211 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 10 V16000 pF @ 50 V
Power Dissipation (Max)
360mW (Ta)1.56W (Tc)3.8W (Ta), 375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PG-HSOG-8-1SOT-23SOT-23-3 (TO-236)
Package / Case
8-PowerSMD, Gull WingTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-HSOG-8-1 Bottom View
IPTG014N10NM5ATMA1
MOSFET N-CH 100V 37A/366A HSOG-8
Infineon Technologies
2,453
In Stock
1 : ¥55.58000
Cut Tape (CT)
1,800 : ¥31.53368
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
37A (Ta), 366A (Tc)
6V, 10V
1.4mOhm @ 150A, 10V
3.8V @ 280µA
211 nC @ 10 V
±20V
16000 pF @ 50 V
-
3.8W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing
134,443
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.88461
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.7A (Tc)
1.8V, 4.5V
50mOhm @ 3A, 4.5V
800mV @ 250µA
9.6 nC @ 4.5 V
±10V
850 pF @ 10 V
-
1.56W (Tc)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
TN2404K-T1-E3
MOSFET N-CH 240V 200MA SOT23-3
Vishay Siliconix
8,450
In Stock
1 : ¥7.14000
Cut Tape (CT)
3,000 : ¥2.71766
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
240 V
200mA (Ta)
2.5V, 10V
4Ohm @ 300mA, 10V
2V @ 250µA
8 nC @ 10 V
±20V
-
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.