Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesTexas InstrumentsVishay Siliconix
Series
-HEXFET®NexFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)14A (Ta), 44A (Tc)17A (Tc)80A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V6V, 10V10V
Rds On (Max) @ Id, Vgs
2mOhm @ 150A, 10V7mOhm @ 40A, 10V10.3mOhm @ 10A, 8V90mOhm @ 9A, 10V300mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA3.5V @ 272µA3.8V @ 50µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.1 nC @ 4.5 V37 nC @ 10 V38 nC @ 10 V156 nC @ 10 V
Vgs (Max)
+10V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 15 V860 pF @ 25 V920 pF @ 25 V2700 pF @ 50 V11200 pF @ 50 V
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)2.7W (Ta)3.7W (Ta), 88W (Tc)3.8W (Ta), 70W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-VSON-CLIP (3.3x3.3)D2PAKPG-HSOF-8-1PG-TDSON-8-7TO-263 (D2PAK)
Package / Case
8-PowerSFN8-PowerTDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CSD1632x Series 8-SON
CSD17308Q3
MOSFET N-CH 30V 14A/44A 8VSON
Texas Instruments
29,329
In Stock
1 : ¥7.55000
Cut Tape (CT)
2,500 : ¥2.85937
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
14A (Ta), 44A (Tc)
3V, 8V
10.3mOhm @ 10A, 8V
1.8V @ 250µA
5.1 nC @ 4.5 V
+10V, -8V
700 pF @ 15 V
-
2.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
8-Power TDFN
BSC070N10NS5ATMA1
MOSFET N-CH 100V 80A TDSON
Infineon Technologies
34,718
In Stock
1 : ¥14.53000
Cut Tape (CT)
5,000 : ¥6.31382
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
6V, 10V
7mOhm @ 40A, 10V
3.8V @ 50µA
38 nC @ 10 V
±20V
2700 pF @ 50 V
-
2.5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
IPT020N10N3ATMA1
IPT020N10N3ATMA1
MOSFET N-CH 100V 300A 8HSOF
Infineon Technologies
11,234
In Stock
1 : ¥61.65000
Cut Tape (CT)
2,000 : ¥32.77774
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
6V, 10V
2mOhm @ 150A, 10V
3.5V @ 272µA
156 nC @ 10 V
±20V
11200 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF530NSTRLPBF
MOSFET N-CH 100V 17A D2PAK
Infineon Technologies
4,907
In Stock
1 : ¥10.34000
Cut Tape (CT)
800 : ¥5.57159
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
10V
90mOhm @ 9A, 10V
4V @ 250µA
37 nC @ 10 V
±20V
920 pF @ 25 V
-
3.8W (Ta), 70W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IRF9530STRLPBF
MOSFET P-CH 100V 12A D2PAK
Vishay Siliconix
1,813
In Stock
1 : ¥20.77000
Cut Tape (CT)
800 : ¥11.62898
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
12A (Tc)
10V
300mOhm @ 7.2A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
860 pF @ 25 V
-
3.7W (Ta), 88W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.