Single FETs, MOSFETs

Results: 3
Manufacturer
EPCSTMicroelectronicsToshiba Semiconductor and Storage
Series
eGaN®SuperMESH™U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V100 V900 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)8A (Tc)36A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
7mOhm @ 25A, 5V28mOhm @ 5A, 10V1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA2.5V @ 5mA4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
3.4 nC @ 4.5 V9 nC @ 5 V72 nC @ 10 V
Vgs (Max)
+6V, -4V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
436 pF @ 15 V900 pF @ 50 V2115 pF @ 25 V
Power Dissipation (Max)
1W (Ta)160W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
D2PAKDieSOT-23F
Package / Case
DieSOT-23-3 Flat LeadsTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
eGaN Series
EPC2001C
GANFET N-CH 100V 36A DIE OUTLINE
EPC
92,853
In Stock
1 : ¥40.88000
Cut Tape (CT)
2,500 : ¥19.89558
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
36A (Ta)
5V
7mOhm @ 25A, 5V
2.5V @ 5mA
9 nC @ 5 V
+6V, -4V
900 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
54,843
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.79515
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
28mOhm @ 5A, 10V
2.5V @ 100µA
3.4 nC @ 4.5 V
±20V
436 pF @ 15 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
D²PAK
STB9NK90Z
MOSFET N-CH 900V 8A D2PAK
STMicroelectronics
680
In Stock
1 : ¥39.32000
Cut Tape (CT)
1,000 : ¥20.34332
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
900 V
8A (Tc)
10V
1.3Ohm @ 3.6A, 10V
4.5V @ 100µA
72 nC @ 10 V
±30V
2115 pF @ 25 V
-
160W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.