Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SI4431CDY-T1-GE3 MOSFET P-CH 30V 9A 8SO Vishay Siliconix	40,262 In Stock	1 : ¥5.99000 Cut Tape (CT) 2,500 : ¥2.29231 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	9A (Tc)	4.5V, 10V	32mOhm @ 7A, 10V	2.5V @ 250µA	38 nC @ 10 V	±20V	1006 pF @ 15 V	-	2.5W (Ta), 4.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
DMN67D7L-7 MOSFET N-CH 60V 210MA SOT23-3 Diodes Incorporated	51,248 In Stock 138,000 Factory	1 : ¥2.05000 Cut Tape (CT) 3,000 : ¥0.34851 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	210mA (Ta)	5V, 10V	5Ohm @ 500mA, 10V	2.5V @ 250µA	0.821 nC @ 10 V	±40V	22 pF @ 25 V	-	570mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
PMXB360ENEAZ MOSFET N-CH 80V 1.1A DFN1010D-3 Nexperia USA Inc.	11,522 In Stock	1 : ¥2.96000 Cut Tape (CT) 5,000 : ¥0.76634 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	1.1A (Ta)	4.5V, 10V	450mOhm @ 1.1A, 10V	2.7V @ 250µA	4.5 nC @ 10 V	±20V	130 pF @ 40 V	-	400mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
BSS138TA MOSFET N-CH 50V 200MA SOT23-3 Diodes Incorporated	13,717 In Stock	1 : ¥3.28000 Cut Tape (CT) 3,000 : ¥0.58848 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	10V	3.5Ohm @ 220mA, 10V	1.5V @ 250µA	-	±20V	50 pF @ 10 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SISS26DN-T1-GE3 MOSFET N-CH 60V 60A PPAK1212-8S Vishay Siliconix	12,522 In Stock	1 : ¥13.30000 Cut Tape (CT) 3,000 : ¥5.50076 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	60A (Tc)	6V, 10V	4.5mOhm @ 15A, 10V	3.6V @ 250µA	37 nC @ 10 V	±20V	1710 pF @ 30 V	-	57W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.