Single FETs, MOSFETs

Results: 12
Manufacturer
Diodes IncorporatedFairchild SemiconductorInfineon TechnologiesNexperia USA Inc.onsemiSTMicroelectronicsVishay Siliconix
Series
-HEXFET®OptiMOS™PowerTrench®STripFET™ IITrenchFET®TrenchMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
20 V30 V40 V60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
630mA (Ta)3A (Ta)4.1A (Tc)13.5A (Ta)22A (Tc)75A (Tc)80A (Tc)88A (Tc)89A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
7mOhm @ 25A, 10V8.3mOhm @ 73A, 10V8.7mOhm @ 10A, 10V9mOhm @ 13.5A, 10V9.6mOhm @ 15A, 10V10mOhm @ 58A, 10V15mOhm @ 25A, 10V15mOhm @ 40A, 10V57mOhm @ 4A, 4.5V64mOhm @ 5.4A, 10V100mOhm @ 3.2A, 10V400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.8V @ 250µA2V @ 1mA3V @ 1mA3V @ 250µA3.5V @ 75µA4V @ 150µA4V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 4.5 V5 nC @ 4.5 V11 nC @ 10 V32 nC @ 5 V34 nC @ 5 V39 nC @ 10 V52 nC @ 10 V55 nC @ 10 V82 nC @ 10 V90 nC @ 10 V180 nC @ 10 V182 nC @ 10 V
Vgs (Max)
±6V±12V±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
60.67 pF @ 16 V295 pF @ 10 V350 pF @ 30 V1514 pF @ 50 V2674 pF @ 15 V3346 pF @ 40 V3600 pF @ 25 V3980 pF @ 50 V4454 pF @ 50 V4900 pF @ 25 V5150 pF @ 50 V5500 pF @ 25 V
Power Dissipation (Max)
280mW (Ta)860mW (Ta)1W (Ta)2W (Ta), 3.3W (Tc)3.8W (Ta), 60W (Tc)125W (Tc)157W (Tc)170W (Tc)200W (Tc)211W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
6-TSOP8-SOICD2PAKPG-TO263-3SOT-523TO-252AA
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-23-6 Thin, TSOT-23-6SOT-523TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
12Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMG1012T-7
MOSFET N-CH 20V 630MA SOT-523
Diodes Incorporated
327,133
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.42139
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
D²PAK
STB80NF10T4
MOSFET N-CH 100V 80A D2PAK
STMicroelectronics
570
In Stock
1 : ¥27.26000
Cut Tape (CT)
1,000 : ¥14.10739
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
10V
15mOhm @ 40A, 10V
4V @ 250µA
182 nC @ 10 V
±20V
5500 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Pkg 5540
SI3442BDV-T1-E3
MOSFET N-CH 20V 3A 6TSOP
Vishay Siliconix
24,761
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥1.53928
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
57mOhm @ 4A, 4.5V
1.8V @ 250µA
5 nC @ 4.5 V
±12V
295 pF @ 10 V
-
860mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
Pkg 5540
SI3458BDV-T1-GE3
MOSFET N-CH 60V 4.1A 6TSOP
Vishay Siliconix
33,467
In Stock
1 : ¥7.14000
Cut Tape (CT)
3,000 : ¥2.71757
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4.1A (Tc)
4.5V, 10V
100mOhm @ 3.2A, 10V
3V @ 250µA
11 nC @ 10 V
±20V
350 pF @ 30 V
-
2W (Ta), 3.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB083N10N3GATMA1
MOSFET N-CH 100V 80A D2PAK
Infineon Technologies
6,667
In Stock
1 : ¥14.78000
Cut Tape (CT)
1,000 : ¥7.00206
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
6V, 10V
8.3mOhm @ 73A, 10V
3.5V @ 75µA
55 nC @ 10 V
±20V
3980 pF @ 50 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK SOT404
PSMN015-100B,118
MOSFET N-CH 100V 75A D2PAK
Nexperia USA Inc.
5,704
In Stock
1 : ¥16.17000
Cut Tape (CT)
800 : ¥8.77464
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
75A (Tc)
10V
15mOhm @ 25A, 10V
4V @ 1mA
90 nC @ 10 V
±20V
4900 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK SOT404
PSMN9R5-100BS,118
MOSFET N-CH 100V 89A D2PAK
Nexperia USA Inc.
5,456
In Stock
1 : ¥18.06000
Cut Tape (CT)
800 : ¥10.07954
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
89A (Tc)
10V
9.6mOhm @ 15A, 10V
4V @ 1mA
82 nC @ 10 V
±20V
4454 pF @ 50 V
-
211W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK SOT404
PSMN8R7-80BS,118
MOSFET N-CH 80V 90A D2PAK
Nexperia USA Inc.
5,392
In Stock
1 : ¥13.79000
Cut Tape (CT)
800 : ¥5.94995
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
90A (Tc)
10V
8.7mOhm @ 10A, 10V
4V @ 1mA
52 nC @ 10 V
±20V
3346 pF @ 40 V
-
170W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-252AA
FDD3690
MOSFET N-CH 100V 22A DPAK
onsemi
6,500
In Stock
1 : ¥15.93000
Cut Tape (CT)
2,500 : ¥6.69177
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
22A (Tc)
6V, 10V
64mOhm @ 5.4A, 10V
4V @ 250µA
39 nC @ 10 V
±20V
1514 pF @ 50 V
-
3.8W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
EL5102ISZ
FDS6670S
SMALL SIGNAL N-CHANNEL MOSFET
Fairchild Semiconductor
28,785
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
13.5A (Ta)
4.5V, 10V
9mOhm @ 13.5A, 10V
3V @ 1mA
34 nC @ 5 V
±20V
2674 pF @ 15 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
D2PAK SOT404
BUK9609-40B,118
MOSFET N-CH 40V 75A D2PAK
Nexperia USA Inc.
5,215
In Stock
1 : ¥14.28000
Cut Tape (CT)
800 : ¥6.06241
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
75A (Tc)
5V, 10V
7mOhm @ 25A, 10V
2V @ 1mA
32 nC @ 5 V
±15V
3600 pF @ 25 V
-
157W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4410TRLPBF
MOSFET N-CH 100V 88A D2PAK
Infineon Technologies
1,252
In Stock
1 : ¥31.36000
Cut Tape (CT)
3,200 : ¥15.25702
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
88A (Tc)
10V
10mOhm @ 58A, 10V
4V @ 150µA
180 nC @ 10 V
±20V
5150 pF @ 50 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 12

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.