Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPB720P15LMATMA1 TRENCH >=100V PG-TO263-3 Infineon Technologies	1,545 In Stock	1 : ¥38.01000 Cut Tape (CT) 1,000 : ¥19.65608 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	150 V	4.6A (Ta), 41A (Tc)	4.5V, 10V	72mOhm @ 37A, 10V	2V @ 5.55mA	224 nC @ 10 V	±20V	11000 pF @ 75 V	-	3.8W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TK62N60W,S1VF MOSFET N-CH 600V 61.8A TO247 Toshiba Semiconductor and Storage	30 In Stock	1 : ¥137.68000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 30.9A, 10V	3.7V @ 3.1mA	180 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C (TJ)	Through Hole	TO-247	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.