Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesonsemiRohm SemiconductorVishay Siliconix
Series
-CoolMOS™ CEHEXFET®PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V40 V500 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)2A (Ta)3.4A (Ta)14.1A (Tc)27A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V2.5V, 4.5V4.5V, 10V13V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 27A, 10V63mOhm @ 3.4A, 4.5V125mOhm @ 2A, 4.5V132mOhm @ 1.4A, 10V380mOhm @ 3.2A, 13V
Vgs(th) (Max) @ Id
1.1V @ 10µA1.5V @ 1mA1.5V @ 250µA3V @ 250µA3.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V3.3 nC @ 4.5 V4.1 nC @ 10 V24.8 nC @ 10 V80 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
105 pF @ 15 V135 pF @ 10 V270 pF @ 24 V584 pF @ 100 V5795 pF @ 20 V
Power Dissipation (Max)
400mW (Ta), 500mW (Tc)1.25W (Ta)1.3W (Ta)2.3W (Ta), 54W (Tc)98W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
Micro3™/SOT-23PG-TO252-3Power33SC-70-3TSMT6 (SC-95)
Package / Case
8-PowerWDFNSC-70, SOT-323SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
Pkg 5549
SI1308EDL-T1-GE3
MOSFET N-CH 30V 1.4A SOT323
Vishay Siliconix
35,265
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.97327
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.4A (Tc)
2.5V, 10V
132mOhm @ 1.4A, 10V
1.5V @ 250µA
4.1 nC @ 10 V
±12V
105 pF @ 15 V
-
400mW (Ta), 500mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
SOT-23-3
IRLML6346TRPBF
MOSFET N-CH 30V 3.4A SOT23
Infineon Technologies
73,718
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83414
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
2.5V, 4.5V
63mOhm @ 3.4A, 4.5V
1.1V @ 10µA
2.9 nC @ 4.5 V
±12V
270 pF @ 24 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
Power33
FDMC8360L
MOSFET N-CH 40V 27A/80A POWER33
onsemi
5,536
In Stock
1 : ¥16.91000
Cut Tape (CT)
3,000 : ¥7.61610
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
27A (Ta), 80A (Tc)
4.5V, 10V
2.1mOhm @ 27A, 10V
3V @ 250µA
80 nC @ 10 V
±20V
5795 pF @ 20 V
-
2.3W (Ta), 54W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
Power33
8-PowerWDFN
TO252-3
IPD50R380CEAUMA1
MOSFET N-CH 500V 14.1A TO252-3
Infineon Technologies
20,527
In Stock
1 : ¥8.87000
Cut Tape (CT)
2,500 : ¥3.67848
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
14.1A (Tc)
13V
380mOhm @ 3.2A, 13V
3.5V @ 260µA
24.8 nC @ 10 V
±20V
584 pF @ 100 V
-
98W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TSMT6_TSMT6 Pkg
RTQ020N03TR
MOSFET N-CH 30V 2A TSMT6
Rohm Semiconductor
10,635
In Stock
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.55327
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2A (Ta)
2.5V, 4.5V
125mOhm @ 2A, 4.5V
1.5V @ 1mA
3.3 nC @ 4.5 V
±12V
135 pF @ 10 V
-
1.25W (Ta)
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.