Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V60 V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
32mOhm @ 4A, 4.5V2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 10 V23.7 nC @ 8 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
22.2 pF @ 30 V1291 pF @ 10 V
Power Dissipation (Max)
380mW (Ta), 2.8W (Tc)700mW (Ta)
Supplier Device Package
DFN0606-3DFN2015H4-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DFN0606-3
NX7002BKHH
MOSFET N-CH 60V 350MA DFN0606-3
Nexperia USA Inc.
29,561
In Stock
1 : ¥2.13000
Cut Tape (CT)
10,000 : ¥0.27355
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
350mA (Ta)
4.5V, 10V
2.8Ohm @ 200mA, 10V
2.1V @ 250µA
1 nC @ 10 V
±20V
22.2 pF @ 30 V
-
380mW (Ta), 2.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
DFN 2015H4-3
DMP1045UFY4-7
MOSFET P-CH 12V 5.5A DFN2015H4-3
Diodes Incorporated
5,801
In Stock
105,000
Factory
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.01865
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
5.5A (Ta)
1.8V, 4.5V
32mOhm @ 4A, 4.5V
1V @ 250µA
23.7 nC @ 8 V
±8V
1291 pF @ 10 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
DFN2015H4-3
3-XFDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.