Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)120A (Tc)
Rds On (Max) @ Id, Vgs
6.7mOhm @ 30A, 10V24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
435 pF @ 15 V14280 pF @ 25 V
Power Dissipation (Max)
3.2W (Ta), 15.6W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PowerPAK® 1212-8TO-263 (D2PAK)
Package / Case
PowerPAK® 1212-8TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SIS412DN-T1-GE3
MOSFET N-CH 30V 12A PPAK1212-8
Vishay Siliconix
55,695
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Tc)
4.5V, 10V
24mOhm @ 7.8A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
435 pF @ 15 V
-
3.2W (Ta), 15.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
TO-263 (D2Pak)
SQM120P06-07L_GE3
MOSFET P-CH 60V 120A TO263
Vishay Siliconix
4,796
In Stock
1 : ¥28.73000
Cut Tape (CT)
800 : ¥17.33736
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
120A (Tc)
4.5V, 10V
6.7mOhm @ 30A, 10V
2.5V @ 250µA
270 nC @ 10 V
±20V
14280 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.