Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiQorvo
Series
-SuperFET® III
Packaging
BulkTube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
650 V800 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V12V
Rds On (Max) @ Id, Vgs
35mOhm @ 50A, 12V360mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
3.8V @ 300µA6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
25.3 nC @ 10 V43 nC @ 12 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
1143 pF @ 400 V1500 pF @ 100 V
Power Dissipation (Max)
96W (Tc)441W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220-3TO-247-4
Package / Case
TO-220-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-4L
UF3C065030K4S
MOSFET N-CH 650V 85A TO247-4
Qorvo
1,955
In Stock
1 : ¥150.24000
Tube
-
Tube
Active
N-Channel
-
650 V
85A (Tc)
12V
35mOhm @ 50A, 12V
6V @ 10mA
43 nC @ 12 V
±25V
1500 pF @ 100 V
-
441W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
TO-220-3
NTP360N80S3Z
MOSFET N-CH 800V 13A TO220-3
onsemi
0
In Stock
4,800
Marketplace
50 : ¥21.74620
Tube
Bulk
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
800 V
13A (Tc)
10V
360mOhm @ 6.5A, 10V
3.8V @ 300µA
25.3 nC @ 10 V
±20V
1143 pF @ 400 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.