Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesTorex Semiconductor Ltd
Series
-OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-Key
Drain to Source Voltage (Vdss)
60 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)31A (Ta), 279A (Tc)112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V7.6mOhm @ 56A, 10250mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA3.8V @ 210µA4.6V @ 160µA
Gate Charge (Qg) (Max) @ Vgs
3.6 nC @ 10 V21 nC @ 10 V160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 20 V4700 pF @ 75 V12000 pF @ 50 V
Power Dissipation (Max)
400mW (Ta)3.8W (Ta), 300W (Tc)214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HDSOP-16-2PG-TO220-3SOT-23
Package / Case
16-PowerSOP ModuleTO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
23,550
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.81630
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1A (Ta)
4.5V, 10V
250mOhm @ 500mA, 10V
2.4V @ 250µA
3.6 nC @ 10 V
±20V
180 pF @ 20 V
-
400mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IAUS300N08S5N012TATMA1
IPTC019N10NM5ATMA1
MOSFET N-CH 100V 31A/279A HDSOP
Infineon Technologies
4,599
In Stock
1 : ¥50.73000
Cut Tape (CT)
1,800 : ¥26.23591
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
31A (Ta), 279A (Tc)
6V, 10V
1.9mOhm @ 100A, 10V
3.8V @ 210µA
160 nC @ 10 V
±20V
12000 pF @ 50 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
TO-220-3
IPP076N15N5AKSA1
MOSFET N-CH 150V 112A TO220-3
Infineon Technologies
602
In Stock
1 : ¥43.35000
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
150 V
112A (Tc)
8V, 10V
7.6mOhm @ 56A, 10
4.6V @ 160µA
21 nC @ 10 V
±20V
4700 pF @ 75 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.