Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS123WQ-7-F MOSFET N-CH 100V 170MA SOT323 Diodes Incorporated	226,560 In Stock	1 : ¥2.79000 Cut Tape (CT) 3,000 : ¥0.46763 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	2V @ 1mA	-	±20V	60 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323	SC-70, SOT-323
RD3P130SPFRATL MOSFET P-CH 100V 13A TO252 Rohm Semiconductor	4,074 In Stock	1 : ¥14.94000 Cut Tape (CT) 2,500 : ¥6.72721 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	13A (Ta)	4V, 10V	200mOhm @ 6.5A, 10V	2.5V @ 1mA	40 nC @ 10 V	±20V	2400 pF @ 25 V	-	20W (Tc)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSH205G2VL MOSFET P-CH 20V 2.3A TO236AB Nexperia USA Inc.	6,800 In Stock	1 : ¥3.86000 Cut Tape (CT) 10,000 : ¥0.64473 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	2.3A (Ta)	1.5V, 4.5V	170mOhm @ 2A, 4.5V	950mV @ 250µA	6.5 nC @ 4.5 V	±8V	418 pF @ 10 V	-	480mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.