Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedTaiwan Semiconductor CorporationVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
380mA (Ta)4.4A (Tc)22A (Tc)25.3A (Tc)34A (Tc)36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 20A, 10V6.2mOhm @ 12A, 10V8.5mOhm @ 13A, 10V15mOhm @ 9A, 10V61mOhm @ 3.2A, 4.5V2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 1mA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.3 nC @ 4.5 V21 nC @ 8 V48 nC @ 10 V56 nC @ 10 V167 nC @ 10 V285 nC @ 10 V
Vgs (Max)
±8V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V2783 pF @ 20 V3216 pF @ 15 V6630 pF @ 15 V9685 pF @ 15 V
Power Dissipation (Max)
370mW (Ta)1.25W (Ta), 1.8W (Tc)3.5W (Ta), 7.8W (Tc)6W (Tc)12.5W (Tc)14W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)
Supplier Device Package
8-SOIC8-SOPSOT-23-3SOT-23-3 (TO-236)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002K-7
MOSFET N-CH 60V 380MA SOT23-3
Diodes Incorporated
332,636
In Stock
56,826,000
Factory
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.28982
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
380mA (Ta)
5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 1mA
0.3 nC @ 4.5 V
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2377EDS-T1-GE3
MOSFET P-CH 20V 4.4A SOT23-3
Vishay Siliconix
24,650
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16186
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.4A (Tc)
1.5V, 4.5V
61mOhm @ 3.2A, 4.5V
1V @ 250µA
21 nC @ 8 V
±8V
-
-
1.25W (Ta), 1.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-SOIC
SI4497DY-T1-GE3
MOSFET P-CH 30V 36A 8SO
Vishay Siliconix
17,198
In Stock
1 : ¥14.86000
Cut Tape (CT)
2,500 : ¥6.70494
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
36A (Tc)
4.5V, 10V
3.3mOhm @ 20A, 10V
2.5V @ 250µA
285 nC @ 10 V
±20V
9685 pF @ 15 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
17,525
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.75538
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
22A (Tc)
4.5V, 10V
15mOhm @ 9A, 10V
2.5V @ 250µA
48 nC @ 10 V
±20V
2783 pF @ 20 V
-
12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI4143DY-T1-GE3
MOSFET P-CHANNEL 30V 25.3A 8SO
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥6.16000
Cut Tape (CT)
2,500 : ¥2.34539
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
P-Channel
MOSFET (Metal Oxide)
30 V
25.3A (Tc)
4.5V, 10V
6.2mOhm @ 12A, 10V
2.5V @ 250µA
167 nC @ 10 V
±25V
6630 pF @ 15 V
-
6W (Tc)
-55°C ~ 150°C (TA)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
0
In Stock
Check Lead Time
5,000 : ¥6.95380
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
30 V
34A (Tc)
4.5V, 10V
8.5mOhm @ 13A, 10V
2.5V @ 250µA
56 nC @ 10 V
±20V
3216 pF @ 15 V
-
14W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.