Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
-OptiMOS™OptiMOS™-5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
360mA (Ta)35A (Tc)176A (Tc)261A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 50A, 10V2mOhm @ 100A, 10V38mOhm @ 35A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA3.3V @ 120µA4V @ 1.7mA4.1V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V63 nC @ 10 V104 nC @ 10 V195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V840 pF @ 50 V2500 pF @ 30 V8125 pF @ 30 V
Power Dissipation (Max)
350mW (Ta)3W (Ta), 188W (Tc)125W (Tc)313W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
PG-TO252-3PG-TO263-3PG-WSON-8-2TO-236AB
Package / Case
8-PowerWDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
442,205
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32700
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.4V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO252-3
IPD380P06NMATMA1
MOSFET P-CH 60V 35A TO252-3
Infineon Technologies
17,812
In Stock
1 : ¥9.52000
Cut Tape (CT)
2,500 : ¥5.68220
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
35A (Tc)
10V
38mOhm @ 35A, 10V
4V @ 1.7mA
63 nC @ 10 V
±20V
2500 pF @ 30 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC070N10NS5SCATMA1
BSC014N06NSSCATMA1
MOSFET N-CH 60V 261A WSON-8
Infineon Technologies
5,203
In Stock
1 : ¥28.41000
Cut Tape (CT)
4,000 : ¥13.83707
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
261A (Tc)
6V, 10V
1.4mOhm @ 50A, 10V
3.3V @ 120µA
104 nC @ 10 V
±20V
8125 pF @ 30 V
-
3W (Ta), 188W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-WSON-8-2
8-PowerWDFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB020N10N5LFATMA1
MOSFET N-CH 100V 176A TO263-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥60.01000
Cut Tape (CT)
1,000 : ¥34.05008
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
176A (Tc)
10V
2mOhm @ 100A, 10V
4.1V @ 270µA
195 nC @ 10 V
±20V
840 pF @ 50 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.