Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

STW48N60DM2 MOSFET N-CH 600V 40A TO247 STMicroelectronics	341 In Stock	1 : ¥49.01000 Tube	MDmesh™ DM2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	79mOhm @ 20A, 10V	5V @ 250µA	70 nC @ 10 V	±25V	3250 pF @ 100 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
STW56N60DM2 MOSFET N-CH 600V 50A TO247 STMicroelectronics	1,135 In Stock	1 : ¥92.69000 Tube	MDmesh™ DM2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	60mOhm @ 25A, 10V	5V @ 250µA	90 nC @ 10 V	±25V	4100 pF @ 100 V	-	360W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
STH315N10F7-6 MOSFET N-CH 100V 180A H2PAK-6 STMicroelectronics	2,730 In Stock	1 : ¥45.32000 Cut Tape (CT) 1,000 : ¥23.42980 Tape & Reel (TR)	DeepGATE™, STripFET™ VII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	2.3mOhm @ 60A, 10V	4.5V @ 250µA	180 nC @ 10 V	±20V	12800 pF @ 25 V	-	315W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-6	TO-263-7, D2PAK (6 Leads + Tab)
STW70N60M2 MOSFET N-CH 600V 68A TO247 STMicroelectronics	812 In Stock	1 : ¥75.94000 Tube	MDmesh™ II Plus	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	68A (Tc)	10V	40mOhm @ 34A, 10V	4V @ 250µA	118 nC @ 10 V	±25V	5200 pF @ 100 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247	TO-247-3
IXFH50N60P3 MOSFET N-CH 600V 50A TO247AD Littelfuse Inc.	313 In Stock	1 : ¥86.94000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	145mOhm @ 500mA, 10V	5V @ 4mA	94 nC @ 10 V	±30V	6300 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH62N65X2 MOSFET N-CH 650V 62A TO247 Littelfuse Inc.	288 In Stock	1 : ¥61.25000 Tube	Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	62A (Tc)	10V	52mOhm @ 31A, 10V	4.5V @ 4mA	104 nC @ 10 V	±30V	5940 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IPW65R080CFDFKSA2 MOSFET N-CH 650V 43.3A TO247-3 Infineon Technologies	154 In Stock	1 : ¥76.43000 Tube	CoolMOS™ CFD2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	43.3A (Tc)	10V	80mOhm @ 17.6A, 10V	4.5V @ 1.8mA	167 nC @ 10 V	±20V	5030 pF @ 100 V	-	391W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
STW56N60M2-4 MOSFET N-CH 600V 52A TO247-4L STMicroelectronics	0 In Stock Check Lead Time	1 : ¥69.95000 Tube	MDmesh™ M2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	52A (Tc)	10V	55mOhm @ 26A, 10V	4V @ 250µA	91 nC @ 10 V	±25V	3750 pF @ 100 V	-	350W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.