Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedNexperia USA Inc.onsemiVishay Siliconix
Series
-PowerTrench®TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
8 V30 V40 V150 V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)800mA (Ta)3A (Ta)5.8A (Tc)30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 10V5V6V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 10A, 10V35mOhm @ 4.4A, 4.5V50mOhm @ 4A, 10V1.2Ohm @ 800mA, 10V2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.3V @ 250µA1.5V @ 250µA2.1V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.9 nC @ 10 V4.1 nC @ 10 V7.7 nC @ 5 V25.1 nC @ 10 V30 nC @ 8 V
Vgs (Max)
±8V±10V±12V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
23.2 pF @ 25 V210 pF @ 75 V798 pF @ 25 V960 pF @ 4 V1326 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)800mW (Ta)960mW (Ta), 1.7W (Tc)1.5W (Ta)44W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
LFPAK33SC-59-3SOT-23-3SOT-23-3 (TO-236)
Package / Case
SOT-1210, 8-LFPAK33 (5-Lead)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN63D8L-7
MOSFET N-CH 30V 350MA SOT23
Diodes Incorporated
416,802
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.31827
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
350mA (Ta)
2.5V, 10V
2.8Ohm @ 250mA, 10V
1.5V @ 250µA
0.9 nC @ 10 V
±20V
23.2 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SC-59-3
DMG3401LSN-7
MOSFET P-CH 30V 3A SC59
Diodes Incorporated
2,923
In Stock
564,000
Factory
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.67112
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3A (Ta)
2.5V, 10V
50mOhm @ 4A, 10V
1.3V @ 250µA
25.1 nC @ 10 V
±12V
1326 pF @ 15 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SC-59-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2305CDS-T1-GE3
MOSFET P-CH 8V 5.8A SOT23-3
Vishay Siliconix
57,127
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.97327
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
8 V
5.8A (Tc)
1.8V, 4.5V
35mOhm @ 4.4A, 4.5V
1V @ 250µA
30 nC @ 8 V
±8V
960 pF @ 4 V
-
960mW (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDN86265P
MOSFET P-CH 150V 800MA SUPERSOT3
onsemi
12,806
In Stock
1 : ¥8.29000
Cut Tape (CT)
3,000 : ¥3.42497
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
800mA (Ta)
6V, 10V
1.2Ohm @ 800mA, 10V
4V @ 250µA
4.1 nC @ 10 V
±25V
210 pF @ 75 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
LFPAK33
BUK9M24-40EX
MOSFET N-CH 40V 30A LFPAK33
Nexperia USA Inc.
3,401
In Stock
1 : ¥5.25000
Cut Tape (CT)
1,500 : ¥2.23515
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
30A (Tc)
5V
20mOhm @ 10A, 10V
2.1V @ 1mA
7.7 nC @ 5 V
±10V
798 pF @ 25 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.