Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesTaiwan Semiconductor Corporation
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V100 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Ta)17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V10V
Rds On (Max) @ Id, Vgs
39mOhm @ 4.7A, 4.5V90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.5 nC @ 4.5 V37 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V1020 pF @ 10 V
Power Dissipation (Max)
1.25W (Ta)3.8W (Ta), 70W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAKSOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MFG_TO-236-3,-SC-59,-SOT-23-3
TSM2323CX RFG
MOSFET P-CHANNEL 20V 4.7A SOT23
Taiwan Semiconductor Corporation
76,020
In Stock
1 : ¥6.40000
Cut Tape (CT)
3,000 : ¥2.42463
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
20 V
4.7A (Ta)
1.8V, 4.5V
39mOhm @ 4.7A, 4.5V
1V @ 250µA
12.5 nC @ 4.5 V
±8V
1020 pF @ 10 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF530NSTRLPBF
MOSFET N-CH 100V 17A D2PAK
Infineon Technologies
5,167
In Stock
1 : ¥10.34000
Cut Tape (CT)
800 : ¥5.57179
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
10V
90mOhm @ 9A, 10V
4V @ 250µA
37 nC @ 10 V
±20V
920 pF @ 25 V
-
3.8W (Ta), 70W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.