Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDV303N MOSFET N-CH 25V 680MA SOT23 onsemi	300,424 In Stock	1 : ¥3.28000 Cut Tape (CT) 3,000 : ¥0.59363 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	25 V	680mA (Ta)	2.7V, 4.5V	450mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3 nC @ 4.5 V	±8V	50 pF @ 10 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMN21D2UFB-7B MOSFET N-CH 20V 760MA 3DFN Diodes Incorporated	43,280 In Stock 750,000 Factory	1 : ¥3.04000 Cut Tape (CT) 10,000 : ¥0.57363 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	760mA (Ta)	1.5V, 4.5V	990mOhm @ 100mA, 4.5V	1V @ 250µA	0.93 nC @ 10 V	±12V	27.6 pF @ 16 V	-	380mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1006-3	3-UFDFN
DMP2043UCA3-7 MOSFET P-CH 20V 4.2A X2DSN1010-3 Diodes Incorporated	2,055 In Stock 855,000 Factory	1 : ¥3.45000 Cut Tape (CT) 5,000 : ¥1.10157 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	45mOhm @ 1A, 4.5V	1.2V @ 250µA	1.9 nC @ 4.5 V	-20V	425 pF @ 10 V	-	650mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	X2-DSN1010-3	3-XFDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.