Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

C3M0045065K GEN 3 650V 49A SIC MOSFET Wolfspeed, Inc.	411 In Stock	1 : ¥161.57000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	49A (Tc)	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	63 nC @ 15 V	+19V, -8V	1621 pF @ 600 V	-	176W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
IPW60R040CFD7XKSA1 MOSFET N-CH 600V 50A TO247-3 Infineon Technologies	190 In Stock	1 : ¥70.03000 Tube	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	40mOhm @ 24.9A, 10V	4.5V @ 1.25mA	109 nC @ 10 V	±20V	4354 pF @ 400 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPB65R099CFD7AATMA1 MOSFET N-CH 650V 24A TO263-3 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥43.59000 Cut Tape (CT) 1,000 : ¥22.54716 Tape & Reel (TR)	CoolMOS™ CFD7A	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	99mOhm @ 12.5A, 10V	4.5V @ 630µA	53 nC @ 10 V	±20V	2513 pF @ 400 V	-	127W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.