Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedonsemiToshiba Semiconductor and Storage
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)220mA (Ta)4.1A (Ta)7.2A (Ta), 23.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V2.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
50mOhm @ 7A, 10V68mOhm @ 12A, 10V1.6Ohm @ 50mA, 5V2Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA1.5V @ 100µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V10.3 nC @ 10 V25 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
58 pF @ 25 V70 pF @ 3 V502 pF @ 30 V1377 pF @ 30 V
Power Dissipation (Max)
200mW (Ta)350mW (Ta)1.9W (Ta)2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
SC-59-3SOT-223-3SOT-23-3TO-252-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138K
MOSFET N-CH 50V 220MA SOT23-3
onsemi
98,019
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.50219
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
1.8V, 2.5V
1.6Ohm @ 50mA, 5V
1.2V @ 250µA
2.4 nC @ 10 V
±12V
58 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-223-3
DMN6068SE-13
MOSFET N-CH 60V 4.1A SOT223
Diodes Incorporated
18,691
In Stock
1 : ¥4.84000
Cut Tape (CT)
4,000 : ¥1.61988
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4.1A (Ta)
4.5V, 10V
68mOhm @ 12A, 10V
3V @ 250µA
10.3 nC @ 10 V
±20V
502 pF @ 30 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
TO-252-2
DMPH6050SK3-13
MOSFET P-CH 60V 7.2A/23.6A TO252
Diodes Incorporated
33,188
In Stock
320,000
Factory
1 : ¥5.17000
Cut Tape (CT)
2,500 : ¥1.96165
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7.2A (Ta), 23.6A (Tc)
4.5V, 10V
50mOhm @ 7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
1377 pF @ 30 V
-
1.9W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
7,404
In Stock
1 : ¥6.57000
Cut Tape (CT)
3,000 : ¥1.55748
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
200mA (Ta)
2.5V
2Ohm @ 50MA, 2.5V
1.5V @ 100µA
-
±20V
70 pF @ 3 V
-
200mW (Ta)
150°C (TJ)
Surface Mount
SC-59-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.