Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesonsemiRenesas Electronics Corporation
Series
-HEXFET®PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)2.4A (Ta)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 25A, 10V52mOhm @ 2.4A, 4.5V220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.5V @ 250µA2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 4.5 V20 nC @ 4.5 V100 nC @ 10 V
Vgs (Max)
±8V±16V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 25 V1312 pF @ 10 V5000 pF @ 10 V
Power Dissipation (Max)
500mW (Ta)1.2W (Ta), 84W (Tc)1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)175°C (TJ)
Supplier Device Package
Micro3™/SOT-23SOT-23-3TO-252 (MP-3ZK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML0100TRPBF
MOSFET N-CH 100V 1.6A SOT23
Infineon Technologies
35,584
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16191
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.6A (Ta)
4.5V, 10V
220mOhm @ 1.6A, 10V
2.5V @ 25µA
2.5 nC @ 4.5 V
±16V
290 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDN304P
MOSFET P-CH 20V 2.4A SUPERSOT3
onsemi
29,518
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.48113
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.4A (Ta)
1.8V, 4.5V
52mOhm @ 2.4A, 4.5V
1.5V @ 250µA
20 nC @ 4.5 V
±8V
1312 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
17,936
In Stock
1 : ¥18.31000
Cut Tape (CT)
2,500 : ¥8.26015
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
-
16.5mOhm @ 25A, 10V
2.5V @ 250µA
100 nC @ 10 V
-
5000 pF @ 10 V
-
1.2W (Ta), 84W (Tc)
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.