Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesMicrochip Technology
Series
-CoolMOS™ CFD2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
400 V650 V
Current - Continuous Drain (Id) @ 25°C
170mA (Tj)68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V10V
Rds On (Max) @ Id, Vgs
41mOhm @ 33.1A, 10V25Ohm @ 120mA, 0V
Vgs(th) (Max) @ Id
4.5V @ 3.3mA-
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V8400 pF @ 100 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
1.6W (Tc)500W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3TO-243AA (SOT-89)
Package / Case
TO-243AATO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
C04-029 MB
DN2540N8-G
MOSFET N-CH 400V 170MA TO243AA
Microchip Technology
22,030
In Stock
1 : ¥8.70000
Cut Tape (CT)
2,000 : ¥6.56789
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
170mA (Tj)
0V
25Ohm @ 120mA, 0V
-
-
±20V
300 pF @ 25 V
Depletion Mode
1.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
PG-TO247-3
IPW65R041CFDFKSA2
MOSFET N-CH 650V 68.5A TO247-3
Infineon Technologies
615
In Stock
1 : ¥110.67000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
68.5A (Tc)
10V
41mOhm @ 33.1A, 10V
4.5V @ 3.3mA
300 nC @ 10 V
±20V
8400 pF @ 100 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.