Single FETs, MOSFETs

Results: 2
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)3.9A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs
58mOhm @ 3.1A, 10V185mOhm @ 1A, 8V
Vgs(th) (Max) @ Id
1.2V @ 1mA1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.2 nC @ 4.2 V12 nC @ 10 V
Power Dissipation (Max)
1W (Ta)1.56W (Ta), 2.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-UDFN (2x2)SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-3636-UDFN Exposed Pad
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-70-6
SI1416EDH-T1-BE3
MOSFET N-CH 30V 3.9A/3.9A SC70-6
Vishay Siliconix
3,262
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.99922
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.9A (Ta), 3.9A (Tc)
-
58mOhm @ 3.1A, 10V
1.4V @ 250µA
12 nC @ 10 V
±12V
-
-
1.56W (Ta), 2.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
39,267
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥0.89044
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
2A (Ta)
1.8V, 8V
185mOhm @ 1A, 8V
1.2V @ 1mA
2.2 nC @ 4.2 V
±12V
130 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
6-UDFN (2x2)
6-UDFN Exposed Pad
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.