Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

CSD19534Q5A MOSFET N-CH 100V 50A 8VSON Texas Instruments	13,623 In Stock	1 : ¥8.29000 Cut Tape (CT) 2,500 : ¥3.42950 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	44A (Tc)	6V, 10V	15.1mOhm @ 10A, 10V	3.4V @ 250µA	22 nC @ 10 V	±20V	1680 pF @ 50 V	-	3.2W (Ta), 63W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (5x6)	8-PowerTDFN
IRLR3110ZTRPBF MOSFET N-CH 100V 42A DPAK Infineon Technologies	12,195 In Stock	1 : ¥14.78000 Cut Tape (CT) 2,000 : ¥6.65003 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	4.5V, 10V	14mOhm @ 38A, 10V	2.5V @ 100µA	48 nC @ 4.5 V	±16V	3980 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SI4465ADY-T1-GE3 MOSFET P-CH 8V 8SOIC Vishay Siliconix	2,121 In Stock	1 : ¥15.43000 Cut Tape (CT) 2,500 : ¥6.46522 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	8 V	13.7A (Ta), 20A (Tc)	1.8V, 4.5V	9mOhm @ 14A, 4.5V	1V @ 250µA	85 nC @ 4.5 V	±8V	-	-	3W (Ta), 6.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.