Single FETs, MOSFETs

Results: 11
Manufacturer
GeneSiC SemiconductorInfineon TechnologiesQorvoRohm SemiconductorSemiQSTMicroelectronicsWolfspeed, Inc.
Series
-C3M™CoolSiC™G3R™MDmesh™ K5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V1700 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)6A (Tc)7.6A (Tc)12A (Tc)17A (Tc)35A (Tc)36A (Tc)41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V12V15V15V, 18V18V20V
Rds On (Max) @ Id, Vgs
78mOhm @ 13A, 18V90mOhm @ 20A, 15V100mOhm @ 20A, 20V208mOhm @ 5A, 18V455mOhm @ 2A, 18V455mOhm @ 3.6A, 15V515mOhm @ 5A, 12V690mOhm @ 6A, 10V2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
2.69V @ 7.5mA3.6V @ 1mA4V @ 10mA5V @ 100µA5.6V @ 2.5mA5.7V @ 1mA5.7V @ 5.6mA6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 18 V13.7 nC @ 10 V19 nC @ 15 V27 nC @ 15 V27.5 nC @ 15 V31 nC @ 18 V42 nC @ 18 V44.2 nC @ 10 V54 nC @ 15 V58 nC @ 20 V
Vgs (Max)
+15V, -4V+22V, -10V+22V, -4V+23V, -7V+25V, -10V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 800 V345 pF @ 1000 V398 pF @ 800 V505 pF @ 100 V740 pF @ 100 V1060 pF @ 800 V1370 pF @ 100 V1377 pF @ 1000 V1560 pF @ 800 V
Power Dissipation (Max)
50W (Tc)60W (Tc)100W (Tc)103W (Tc)130W (Tc)150W (Tc)188W (Tc)207W (Tc)250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
H2PAK-2PG-TO247-3-41PG-TO247-4-1TO-247TO-247-3TO-247-4TO-247N
Package / Case
TO-247-3TO-247-4TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3L
UF3C170400K3S
SICFET N-CH 1700V 7.6A TO247-3
Qorvo
75,991
In Stock
1 : ¥60.59000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1700 V
7.6A (Tc)
12V
515mOhm @ 5A, 12V
6V @ 10mA
27.5 nC @ 15 V
±25V
740 pF @ 100 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
2,753
In Stock
1 : ¥60.75000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.6A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
19 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3 HiP
STW12N120K5
MOSFET N-CH 1200V 12A TO247
STMicroelectronics
1,197
In Stock
1 : ¥79.88000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
12A (Tc)
10V
690mOhm @ 6A, 10V
5V @ 100µA
44.2 nC @ 10 V
±30V
1370 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247N
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
2,883
In Stock
1 : ¥82.84000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
208mOhm @ 5A, 18V
5.6V @ 2.5mA
42 nC @ 18 V
+22V, -4V
398 pF @ 800 V
-
103W (Tc)
175°C (TJ)
Through Hole
TO-247N
TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
537
In Stock
1 : ¥88.42000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
H2PAK
STH12N120K5-2
MOSFET N-CH 1200V 12A H2PAK-2
STMicroelectronics
1,061
In Stock
1 : ¥98.11000
Cut Tape (CT)
1,000 : ¥55.64351
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
12A (Tc)
10V
690mOhm @ 6A, 10V
5V @ 100µA
44.2 nC @ 10 V
±30V
1370 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
H2PAK-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
CoolSiC Series
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
217
In Stock
1 : ¥103.03000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
TO-247-3 AC EP
IMW120R350M1HXKSA1
SICFET N-CH 1.2KV 4.7A TO247-3
Infineon Technologies
1,239
In Stock
1 : ¥43.84000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
15V, 18V
455mOhm @ 2A, 18V
5.7V @ 1mA
5.3 nC @ 18 V
+23V, -7V
182 pF @ 800 V
-
60W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3 HiP
STW8N120K5
MOSFET N-CH 1200V 6A TO247
STMicroelectronics
16,670
In Stock
1 : ¥58.95000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
6A (Tc)
10V
2Ohm @ 2.5A, 10V
5V @ 100µA
13.7 nC @ 10 V
±30V
505 pF @ 100 V
-
130W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
TO-247-3L
UF3C120400K3S
SICFET N-CH 1200V 7.6A TO247-3
Qorvo
576
In Stock
1 : ¥49.75000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
7.6A (Tc)
12V
515mOhm @ 5A, 12V
6V @ 10mA
27 nC @ 15 V
±25V
740 pF @ 100 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
GP2T080A120U
GP2T080A120U
SIC MOSFET 1200V 80M TO-247-3L
SemiQ
1,369
In Stock
1 : ¥93.76000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
35A (Tc)
20V
100mOhm @ 20A, 20V
4V @ 10mA
58 nC @ 20 V
+25V, -10V
1377 pF @ 1000 V
-
188W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
Showing
of 11

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.