Single FETs, MOSFETs

Results: 14
Manufacturer
Diodes IncorporatedGood-Ark SemiconductorInfineon TechnologiesNexperia USA Inc.onsemiPanjit International Inc.Toshiba Semiconductor and StorageVishay Siliconix
Series
-OptiMOS™SIPMOS®TrenchFET®U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time BuyNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V55 V60 V75 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)170mA (Ta)200mA220mA (Ta)270mA (Ta)300mA (Ta)330mA (Ta)360mA (Ta)540mA (Ta)85A (Tc)150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4V, 10V4.5V, 10V5V5V, 10V10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 50A, 10V19mOhm @ 30A, 10V650mOhm @ 270mA, 10V1.6Ohm @ 500mA, 10V2Ohm @ 330mA, 10V3Ohm @ 500mA, 10V4Ohm @ 500mA, 10V4.2Ohm @ 500mA, 10V5Ohm @ 200mA, 10V8Ohm @ 150mA, 10V8Ohm @ 170mA, 10V10Ohm @ 100mA, 5V10Ohm @ 130mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA2V @ 1mA2V @ 2.7µA2V @ 20µA2V @ 250µA2V @ 80µA2.4V @ 250µA2.5V @ 250µA3V @ 250µA3.5V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V1.1 nC @ 4.5 V1.3 nC @ 5 V1.5 nC @ 10 V1.8 nC @ 10 V2.26 nC @ 10 V2.4 nC @ 10 V3.57 nC @ 10 V72 nC @ 10 V120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 25 V19 pF @ 25 V27 pF @ 25 V30 pF @ 5 V45 pF @ 25 V50 pF @ 10 V51 pF @ 25 V73 pF @ 25 V75 pF @ 25 V78 pF @ 25 V87 pF @ 25 V6000 pF @ 37.5 V6285 pF @ 25 V
Power Dissipation (Max)
225mW225mW (Ta)250mW (Tc)350mW (Ta)360mW (Ta)380mW (Ta)500mW (Ta)142W (Tc)375W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-SOP Advance (5x5)PG-SOT23SOT-23SOT-23-3SOT-23-3 (TO-236)TO-236ABTO-263 (D2PAK)
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002P,235
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
1,183,405
In Stock
1 : ¥1.97000
Cut Tape (CT)
10,000 : ¥0.18883
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.4V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-236AB
BSS84,215
MOSFET P-CH 50V 130MA TO236AB
Nexperia USA Inc.
198,741
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.41963
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
10V
10Ohm @ 130mA, 10V
2V @ 1mA
-
±20V
45 pF @ 25 V
-
250mW (Tc)
-65°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS138
MOSFET N-CH 50V 220MA SOT23-3
onsemi
205,201
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.48928
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
2.4 nC @ 10 V
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
Infineon Technologies
128,367
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.78379
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
330mA (Ta)
4.5V, 10V
2Ohm @ 330mA, 10V
2V @ 80µA
3.57 nC @ 10 V
±20V
78 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS123
MOSFET N-CH 100V 170MA SOT23-3
onsemi
28,327
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.51984
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
Infineon Technologies
383,973
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.50028
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
170mA (Ta)
4.5V, 10V
8Ohm @ 170mA, 10V
2V @ 20µA
1.5 nC @ 10 V
±20V
19 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT 23-3
BSS84LT1G
MOSFET P-CH 50V 130MA SOT23-3
onsemi
53,782
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.50761
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 250µA
-
±20V
30 pF @ 5 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP10H4D2S-7
MOSFET P-CH 100V 270MA SOT23
Diodes Incorporated
69,671
In Stock
2,217,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71143
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
270mA (Ta)
4V, 10V
4.2Ohm @ 500mA, 10V
3V @ 250µA
1.8 nC @ 10 V
±20V
87 pF @ 25 V
-
380mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS670S2LH6327XTSA1
MOSFET N-CH 55V 540MA SOT23-3
Infineon Technologies
19,535
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.58243
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
540mA (Ta)
4.5V, 10V
650mOhm @ 270mA, 10V
2V @ 2.7µA
2.26 nC @ 10 V
±20V
75 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT 23-3
BSS84
MOSFET P-CH 50V 130MA SOT23-3
onsemi
112,545
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.06410
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
4.5V, 10V
8Ohm @ 150mA, 10V
2.5V @ 250µA
1.3 nC @ 5 V
±20V
73 pF @ 25 V
-
225mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
115,594
In Stock
1 : ¥11.66000
Cut Tape (CT)
5,000 : ¥4.60209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
150A (Tc)
10V
2.6mOhm @ 50A, 10V
4V @ 1mA
72 nC @ 10 V
±20V
6000 pF @ 37.5 V
-
142W (Tc)
150°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
2,079
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.54874
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
2.5V, 10V
4Ohm @ 500mA, 10V
2.5V @ 250µA
1.1 nC @ 4.5 V
±20V
51 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
GSFKW0202
BSS84
MOSFET, P-CH, SINGLE, -0.13A, -5
Good-Ark Semiconductor
38,989
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.21567
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V, 10V
10Ohm @ 100mA, 5V
2V @ 250µA
-
±20V
30 pF @ 5 V
-
225mW
150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TO-263 (D2Pak)
SQM85N15-19_GE3
MOSFET N-CH 150V 85A TO263
Vishay Siliconix
800
In Stock
1 : ¥28.73000
Cut Tape (CT)
800 : ¥17.33736
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
150 V
85A (Tc)
10V
19mOhm @ 30A, 10V
3.5V @ 250µA
120 nC @ 10 V
±20V
6285 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 14

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.