Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesSTMicroelectronicsVishay Siliconix
Series
CoolMOS™ C7HEXFET®OptiMOS™SuperMESH3™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V600 V620 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)2.8A (Tc)13A (Tc)33A (Tc)80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
7mOhm @ 40A, 10V44mOhm @ 16A, 10V170mOhm @ 2.4A, 10V185mOhm @ 5.3A, 10V3.6Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.8V @ 50µA4V @ 250µA4V @ 260µA4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V24 nC @ 10 V38 nC @ 10 V71 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
340 pF @ 50 V620 pF @ 30 V1080 pF @ 400 V1960 pF @ 25 V2700 pF @ 50 V
Power Dissipation (Max)
2W (Tc)2.5W (Ta), 83W (Tc)45W (Tc)77W (Tc)130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TA)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DPAKPG-TDSON-8-7PG-VSON-4TO-220AB
Package / Case
4-PowerTSFN8-PowerTDFNTO-220-3TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF540NPBF
MOSFET N-CH 100V 33A TO220AB
Infineon Technologies
134,853
In Stock
1 : ¥7.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
8-Power TDFN
BSC070N10NS5ATMA1
MOSFET N-CH 100V 80A TDSON
Infineon Technologies
34,718
In Stock
1 : ¥14.53000
Cut Tape (CT)
5,000 : ¥6.31382
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
6V, 10V
7mOhm @ 40A, 10V
3.8V @ 50µA
38 nC @ 10 V
±20V
2700 pF @ 50 V
-
2.5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
MFG_DPAK(TO252-3)
STD2N62K3
MOSFET N-CH 620V 2.2A DPAK
STMicroelectronics
4,337
In Stock
1 : ¥12.40000
Cut Tape (CT)
2,500 : ¥5.12254
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
620 V
2.2A (Tc)
10V
3.6Ohm @ 1.1A, 10V
4.5V @ 50µA
15 nC @ 10 V
±30V
340 pF @ 50 V
-
45W (Tc)
150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-VSON-4
IPL60R185C7AUMA1
MOSFET N-CH 600V 13A 4VSON
Infineon Technologies
2,922
In Stock
1 : ¥23.81000
Cut Tape (CT)
3,000 : ¥9.97866
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V
185mOhm @ 5.3A, 10V
4V @ 260µA
24 nC @ 10 V
±20V
1080 pF @ 400 V
-
77W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
SOT-23-3
SQ2361AEES-T1_GE3
MOSFET P-CH 60V 2.8A SSOT23
Vishay Siliconix
48,295
In Stock
1 : ¥7.72000
Cut Tape (CT)
3,000 : ¥1.77583
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
P-Channel
MOSFET (Metal Oxide)
60 V
2.8A (Tc)
10V
170mOhm @ 2.4A, 10V
2.5V @ 250µA
15 nC @ 10 V
±20V
620 pF @ 30 V
-
2W (Tc)
-55°C ~ 175°C (TA)
Automotive
AEC-Q101
Surface Mount
-
TO-236-3, SC-59, SOT-23-3
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.