Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesNexperia USA Inc.Rohm SemiconductorTexas Instruments
Series
-NexFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
12 V20 V80 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)1.6A (Ta)3.2A (Ta)49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 2.5V1.5V, 4.5V1.8V, 4.5V6V, 10V
Rds On (Max) @ Id, Vgs
11.7mOhm @ 25A, 10V34mOhm @ 1A, 4.5V54mOhm @ 3.2A, 4.5V1.2Ohm @ 100mA, 2.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 1mA1.1V @ 250µA3.8V @ 22µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V10 nC @ 4.5 V18 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V462 pF @ 6 V551 pF @ 10 V1300 pF @ 40 V
Power Dissipation (Max)
150mW (Ta)400mW (Ta), 8.33W (Tc)1.2W (Ta)2.5W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
4-DSBGA (1x1)DFN1010D-3EMT3F (SOT-416FL)PG-TDSON-8-7
Package / Case
3-XDFN Exposed Pad4-UFBGA, DSBGA8-PowerTDFNSC-89, SOT-490
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EMT3F
RE1C002UNTCL
MOSFET N-CH 20V 200MA EMT3F
Rohm Semiconductor
1,344,591
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.19539
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.2V, 2.5V
1.2Ohm @ 100mA, 2.5V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
EMT3F (SOT-416FL)
SC-89, SOT-490
3-XFDFN Exposed Pad
PMXB43UNEZ
MOSFET N-CH 20V 3.2A DFN1010D-3
Nexperia USA Inc.
48,113
In Stock
1 : ¥3.78000
Cut Tape (CT)
5,000 : ¥0.81382
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4.5V
54mOhm @ 3.2A, 4.5V
900mV @ 250µA
10 nC @ 4.5 V
±8V
551 pF @ 10 V
-
400mW (Ta), 8.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010D-3
3-XDFN Exposed Pad
5,331
In Stock
1 : ¥11.82000
Cut Tape (CT)
5,000 : ¥4.64488
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
49A (Tc)
6V, 10V
11.7mOhm @ 25A, 10V
3.8V @ 22µA
18 nC @ 10 V
±20V
1300 pF @ 40 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
4-DSBGA-YZB
CSD13201W10
MOSFET N-CH 12V 1.6A 4DSBGA
Texas Instruments
39,263
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.06177
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
1.6A (Ta)
1.8V, 4.5V
34mOhm @ 1A, 4.5V
1.1V @ 250µA
2.9 nC @ 4.5 V
±8V
462 pF @ 6 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-DSBGA (1x1)
4-UFBGA, DSBGA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.