Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQ1464EEH-T1_GE3 MOSFET N-CH 60V 440MA SC70-6 Vishay Siliconix	7,663 In Stock	1 : ¥3.94000 Cut Tape (CT) 3,000 : ¥1.07055 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	440mA (Tc)	1.5V	1.41Ohm @ 2A, 1.5V	1V @ 250µA	4.1 nC @ 4.5 V	±8V	140 pF @ 25 V	-	430mW (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
IPT015N10NF2SATMA1 MOSFET Infineon Technologies	572 In Stock	1 : ¥39.49000 Cut Tape (CT) 1,800 : ¥20.40962 Tape & Reel (TR)	StrongIRFET™ 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	35A (Ta), 315A (Tc)	6V, 10V	1.5mOhm @ 150A, 10V	3.8V @ 267µA	242 nC @ 10 V	±20V	11000 pF @ 50 V	-	3.8W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOF-8-10	8-PowerSFN
IRF300P226 MOSFET N-CH 300V 100A TO247AC Infineon Technologies	0 In Stock Check Lead Time	1 : ¥87.35000 Tube	StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	100A (Tc)	10V	19mOhm @ 45A, 10V	4V @ 270µA	191 nC @ 10 V	±20V	10030 pF @ 50 V	-	556W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.