Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesMicro Commercial CoSTMicroelectronics
Series
-MDmesh™ II PlusMDmesh™ M2OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
40 V60 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
3A (Tj)17.9A (Ta), 100A (Tc)24A (Tc)26A (Tc)39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1mOhm @ 50A, 10V4.9mOhm @ 50A, 10V105mOhm @ 3A, 10V125mOhm @ 13A, 10V140mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
1.3V @ 250µA2V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V41.5 nC @ 10 V45.5 nC @ 10 V47.1 nC @ 10 V133 nC @ 10 V
Vgs (Max)
±16V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
247 pF @ 30 V1781 pF @ 100 V1790 pF @ 100 V2962 pF @ 30 V9520 pF @ 20 V
Power Dissipation (Max)
1.2W2.6W (Ta), 125W (Tc)3W (Ta), 167W (Tc)190W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TDSON-8 FLPowerDI5060-8SOT-23TO-220TO-263 (D2PAK)
Package / Case
8-PowerTDFNTO-220-3TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
D2Pak
STB33N65M2
MOSFET N-CH 650V 24A D2PAK
STMicroelectronics
305
In Stock
1 : ¥32.59000
Cut Tape (CT)
1,000 : ¥16.85634
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
140mOhm @ 12A, 10V
4V @ 250µA
41.5 nC @ 10 V
±25V
1790 pF @ 100 V
-
190W (Tc)
150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SOT 23
SI2310B-TP
MOSFET N-CH 60V 3A SOT23
Micro Commercial Co
102,885
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.53748
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3A (Tj)
4.5V, 10V
105mOhm @ 3A, 10V
1.3V @ 250µA
6 nC @ 4.5 V
±16V
247 pF @ 30 V
-
1.2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DMPH4015SPSQ-13
DMT6005LPS-13
MOSFET N-CHA 60V 17.9A POWERDI
Diodes Incorporated
3,686
In Stock
195,000
Factory
1 : ¥8.62000
Cut Tape (CT)
2,500 : ¥3.57458
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17.9A (Ta), 100A (Tc)
4.5V, 10V
4.9mOhm @ 50A, 10V
3V @ 250µA
47.1 nC @ 10 V
±20V
2962 pF @ 30 V
-
2.6W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI5060-8
8-PowerTDFN
TO-220-3
STP33N60M2
MOSFET N-CH 600V 26A TO220
STMicroelectronics
636
In Stock
1 : ¥31.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
26A (Tc)
10V
125mOhm @ 13A, 10V
4V @ 250µA
45.5 nC @ 10 V
±25V
1781 pF @ 100 V
-
190W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
PG-TDSON-8 FL
BSC010N04LSTATMA1
MOSFET N-CH 40V 39A/100A TDSON
Infineon Technologies
3,555
In Stock
1 : ¥22.17000
Cut Tape (CT)
5,000 : ¥10.35321
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
39A (Ta), 100A (Tc)
4.5V, 10V
1mOhm @ 50A, 10V
2V @ 250µA
133 nC @ 10 V
±20V
9520 pF @ 20 V
-
3W (Ta), 167W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.