Single FETs, MOSFETs

Results: 9
Manufacturer
Micro Commercial CoonsemiVishay Siliconix
Series
-QFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Ta)6A (Ta)7.82A (Ta), 20A (Tc)9.4A (Ta), 34.6A (Tc)9.4A (Tc)12.5A (Ta), 52.1A (Tc)16A (Tc)28A50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
13.8mOhm @ 15A, 10V15.5mOhm @ 17A, 10V23mOhm @ 15A, 10V26.5mOhm @ 10A, 10V40mOhm @ 20A, 10V52mOhm @ 6A, 10V52mOhm @ 7A, 10V65mOhm @ 5.7A, 10V185mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.4V @ 255µA2.4V @ 420µA2.5V @ 250µA2.7V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V16.3 nC @ 10 V17 nC @ 10 V19.3 nC @ 10 V25 nC @ 10 V26.5 nC @ 10 V38 nC @ 10 V150 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
327 pF @ 25 V550 pF @ 25 V1050 pF @ 30 V1058 pF @ 20 V1258 pF @ 25 V1258 pF @ 30 V1385 pF @ 25 V1734 pF @ 20 V5910 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 38W (Tc)3W (Ta), 20W (Tc)3.2W (Ta), 21W (Tc)3.2W (Ta), 40W (Tc)3.5W (Ta), 44.1W (Tc)3.6W (Ta), 60W (Tc)53W (Tc)60W136W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)8-WDFN (3.3x3.3)DFN5060PowerPAK® 1212-8WTO-252AA
Package / Case
8-PowerTDFN8-PowerTDFN, 5 Leads8-PowerWDFNPowerPAK® 1212-8WTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
9Results
Showing
of 9
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK-1212-8W_Top
SQ7415CENW-T1_GE3
AUTOMOTIVE P-CHANNEL 60-V (D-S)
Vishay Siliconix
10,151
In Stock
1 : ¥7.72000
Cut Tape (CT)
3,000 : ¥2.92209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
16A (Tc)
4.5V, 10V
65mOhm @ 5.7A, 10V
2.5V @ 250µA
38 nC @ 10 V
±20V
1385 pF @ 25 V
-
53W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 1212-8W
PowerPAK® 1212-8W
8-WDFN
NTTFS5116PLTAG
MOSFET P-CH 60V 5.7A 8WDFN
onsemi
14,385
In Stock
1 : ¥7.96000
Cut Tape (CT)
1,500 : ¥3.48435
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
5.7A (Ta)
4.5V, 10V
52mOhm @ 6A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
1258 pF @ 30 V
-
3.2W (Ta), 40W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
8-WDFN
NVTFS5116PLTWG
MOSFET P-CH 60V 6A 8WDFN
onsemi
13,282
In Stock
1 : ¥9.03000
Cut Tape (CT)
5,000 : ¥3.57123
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4.5V, 10V
52mOhm @ 7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
1258 pF @ 25 V
-
3.2W (Ta), 21W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
TO-252
SQD50P06-15L_GE3
MOSFET P-CH 60V 50A TO252
Vishay Siliconix
4,876
In Stock
1 : ¥22.99000
Cut Tape (CT)
2,000 : ¥11.17790
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
15.5mOhm @ 17A, 10V
2.5V @ 250µA
150 nC @ 10 V
±20V
5910 pF @ 25 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
DFN5060
MCAC28P06Y-TP
P-CHANNEL MOSFET, DFN5060
Micro Commercial Co
3,803
In Stock
1 : ¥7.47000
Cut Tape (CT)
5,000 : ¥2.68658
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
28A
-
40mOhm @ 20A, 10V
2.7V @ 250µA
19.3 nC @ 10 V
±20V
1050 pF @ 30 V
-
60W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN5060
8-PowerTDFN
8-WDFN
NVTFS5C680NLTAG
MOSFET N-CH 60V 7.82A/20A 8WDFN
onsemi
2,250
In Stock
24,000
Factory
1 : ¥6.81000
Cut Tape (CT)
1,500 : ¥3.00823
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
7.82A (Ta), 20A (Tc)
4.5V, 10V
26.5mOhm @ 10A, 10V
2.2V @ 250µA
6 nC @ 10 V
±20V
327 pF @ 25 V
-
3W (Ta), 20W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
5-DFN, 8-SO Flat Lead
NVMFWS025P04M8LT1G
MV8 40V P-CH LL IN S08FL PACKAGE
onsemi
1,419
In Stock
1 : ¥7.06000
Cut Tape (CT)
1,500 : ¥3.11283
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
9.4A (Ta), 34.6A (Tc)
4.5V, 10V
23mOhm @ 15A, 10V
2.4V @ 255µA
16.3 nC @ 10 V
±20V
1058 pF @ 20 V
-
3.5W (Ta), 44.1W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NVMFWS014P04M8LT1G
MV8 40V P-CH LL IN S08FL PACKAGE
onsemi
918
In Stock
1 : ¥7.80000
Cut Tape (CT)
1,500 : ¥3.43143
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
12.5A (Ta), 52.1A (Tc)
4.5V, 10V
13.8mOhm @ 15A, 10V
2.4V @ 420µA
26.5 nC @ 10 V
±20V
1734 pF @ 20 V
-
3.6W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
TO-252AA
FQD11P06TM
MOSFET P-CH 60V 9.4A DPAK
onsemi
14
In Stock
1 : ¥8.95000
Cut Tape (CT)
2,500 : ¥3.71471
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
9.4A (Tc)
10V
185mOhm @ 4.7A, 10V
4V @ 250µA
17 nC @ 10 V
±30V
550 pF @ 25 V
-
2.5W (Ta), 38W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.