Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedGoford SemiconductorNexperia USA Inc.onsemiRohm SemiconductorVishay Siliconix
Series
-PowerTrench®SGTTrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)6.5A (Ta)13A (Tc)21A (Tc)42A (Tc)51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4V, 10V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 5A, 10V11.5mOhm @ 10A, 10V12.8mOhm @ 16A, 10V19mOhm @ 10A, 10V37mOhm @ 6.5A, 10V67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.5V @ 1mA2.5V @ 250µA4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V14 nC @ 6 V16 nC @ 5 V18 nC @ 10 V18.77 nC @ 10 V32 nC @ 10 V
Vgs (Max)
±12V±20V20V
Input Capacitance (Ciss) (Max) @ Vds
447 pF @ 10 V600 pF @ 20 V642 pF @ 20 V900 pF @ 10 V957 pF @ 30 V1515 pF @ 50 V
Power Dissipation (Max)
500mW (Ta)2W (Ta)3.9W (Ta), 15.6W (Tc)23W (Tc)34.7W (Tc)63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-DFN (3.15x3.05)8-PQFN (5x6)8-SOPMLPAK33PowerPAK® SO-8SOT-323
Package / Case
8-PowerTDFN8-PowerVDFN8-SOIC (0.154", 3.90mm Width)PowerPAK® SO-8SC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
6Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-PQFN
FDMS86183
MOSFET N-CH 100V 51A 8PQFN
onsemi
13,406
In Stock
21,000
Factory
1 : ¥12.89000
Cut Tape (CT)
3,000 : ¥5.32192
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
51A (Tc)
6V, 10V
12.8mOhm @ 16A, 10V
4V @ 90µA
14 nC @ 6 V
±20V
1515 pF @ 50 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
SOT-323
DMN3067LW-7
MOSFET N-CH 30V 2.6A SOT-323
Diodes Incorporated
16,477
In Stock
1,443,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71001
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.6A (Ta)
2.5V, 4.5V
67mOhm @ 2.5A, 4.5V
1.5V @ 250µA
4.6 nC @ 4.5 V
±12V
447 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
8-Power VDFN
PXN012-60QLJ
PXN012-60QL/SOT8002/MLPAK33
Nexperia USA Inc.
32,767
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.56569
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
42A (Tc)
4.5V, 10V
11.5mOhm @ 10A, 10V
2.5V @ 1mA
18.77 nC @ 10 V
±20V
957 pF @ 30 V
-
34.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
MLPAK33
8-PowerVDFN
8-SOIC
RSH065N06TB1
MOSFET N-CH 60V 6.5A 8SOP
Rohm Semiconductor
950
In Stock
1 : ¥11.08000
Cut Tape (CT)
2,500 : ¥4.16648
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6.5A (Ta)
4V, 10V
37mOhm @ 6.5A, 10V
2.5V @ 1mA
16 nC @ 5 V
20V
900 pF @ 10 V
-
2W (Ta)
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
G30N04D3
GT100N04D3
N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Goford Semiconductor
4,559
In Stock
1 : ¥3.28000
Cut Tape (CT)
5,000 : ¥1.04478
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
13A (Tc)
4.5V, 10V
10mOhm @ 5A, 10V
2.5V @ 250µA
32 nC @ 10 V
±20V
642 pF @ 20 V
-
23W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (3.15x3.05)
8-PowerVDFN
PowerPAK SO-8
SIR836DP-T1-GE3
MOSFET N-CH 40V 21A PPAK SO-8
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥6.57000
Cut Tape (CT)
3,000 : ¥2.48136
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
21A (Tc)
4.5V, 10V
19mOhm @ 10A, 10V
2.5V @ 250µA
18 nC @ 10 V
±20V
600 pF @ 20 V
-
3.9W (Ta), 15.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.