Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Vishay Siliconix
Series
AlphaSGT™TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
28A (Tc)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7.5V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 15A, 10V9.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 30 V3250 pF @ 30 V
Power Dissipation (Max)
27.5W (Tc)69.4W (Tc)
Supplier Device Package
8-DFN-EP (3x3)PowerPAK® SO-8
Package / Case
8-PowerVDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SIR182DP-T1-RE3
MOSFET N-CH 60V 60A PPAK SO-8
Vishay Siliconix
16,181
In Stock
1 : ¥13.14000
Cut Tape (CT)
3,000 : ¥5.91114
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
7.5V, 10V
2.8mOhm @ 15A, 10V
3.6V @ 250µA
64 nC @ 10 V
±20V
3250 pF @ 30 V
-
69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-DFN
AON7264E
MOSFET N-CHANNEL 60V 28A 8DFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
5,000 : ¥2.01493
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
28A (Tc)
4.5V, 10V
9.5mOhm @ 17A, 10V
2.4V @ 250µA
25 nC @ 10 V
±20V
1100 pF @ 30 V
-
27.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.