Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IGLR60R190D1XUMA1 GAN HV Infineon Technologies	4,085 In Stock	1 : ¥47.86000 Cut Tape (CT) 5,000 : ¥22.37172 Tape & Reel (TR)	CoolGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	600 V	12.8A (Tc)	-	-	1.6V @ 960µA	-10V	157 pF @ 400 V	-	55.5W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-6	8-PowerTDFN
IGLD60R070D1AUMA3 GANFET N-CH Infineon Technologies	1,477 In Stock	1 : ¥93.02000 Cut Tape (CT) 3,000 : ¥54.80045 Tape & Reel (TR)	CoolGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	600 V	15A (Tc)	-	-	1.6V @ 2.6mA	-10V	380 pF @ 400 V	-	114W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-LSON-8-1	8-LDFN Exposed Pad
IGO60R070D1AUMA2 GAN HV Infineon Technologies	794 In Stock	1 : ¥101.56000 Cut Tape (CT) 800 : ¥70.09563 Tape & Reel (TR)	CoolGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	-	1.6V @ 2.6mA	-10V	380 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-85	20-PowerSOIC (0.433", 11.00mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.