Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFZ44NPBF MOSFET N-CH 55V 49A TO220AB Infineon Technologies	22,684 In Stock	1 : ¥10.67000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	49A (Tc)	10V	17.5mOhm @ 25A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1470 pF @ 25 V	-	94W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPD075N03LGATMA1 MOSFET N-CH 30V 50A TO252-3 Infineon Technologies	15,528 In Stock	1 : ¥5.01000 Cut Tape (CT) 2,500 : ¥2.40137 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	7.5mOhm @ 30A, 10V	2.2V @ 250µA	18 nC @ 10 V	±20V	1900 pF @ 15 V	-	47W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF5305PBF MOSFET P-CH 55V 31A TO220AB Infineon Technologies	38,305 In Stock	1 : ¥11.33000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	60mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.