Single FETs, MOSFETs

Results: 3
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)1.8A (Ta)12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V6V, 10V10V
Rds On (Max) @ Id, Vgs
9mOhm @ 80A, 10V85mOhm @ 1.6A, 4.5V185mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA4V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 4.5 V14.3 nC @ 10 V110 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
492 pF @ 25 V675 pF @ 10 V6000 pF @ 25 V
Power Dissipation (Max)
420mW (Ta)1W (Ta)310W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-223 (TO-261)SOT-23-3 (TO-236)TO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
NTR4101PT1G
MOSFET P-CH 20V 1.8A SOT23-3
onsemi
51,778
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.71688
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1.8A (Ta)
1.8V, 4.5V
85mOhm @ 1.6A, 4.5V
1.2V @ 250µA
8.5 nC @ 4.5 V
±8V
675 pF @ 10 V
-
420mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-223 (TO-261)
NTF2955T1G
MOSFET P-CH 60V 1.7A SOT223
onsemi
17,516
In Stock
1 : ¥9.28000
Cut Tape (CT)
1,000 : ¥4.07707
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.7A (Ta)
10V
185mOhm @ 2.4A, 10V
4V @ 1mA
14.3 nC @ 10 V
±20V
492 pF @ 25 V
-
1W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
TO-263
FDB3632
MOSFET N-CH 100V 12A/80A D2PAK
onsemi
4,861
In Stock
1 : ¥24.88000
Cut Tape (CT)
800 : ¥14.99973
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
12A (Ta), 80A (Tc)
6V, 10V
9mOhm @ 80A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
6000 pF @ 25 V
-
310W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.