Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS138NH6327XTSA2 MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies	122,532 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.54535 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Ta)	4.5V, 10V	3.5Ohm @ 230mA, 10V	1.4V @ 26µA	1.4 nC @ 10 V	±20V	41 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
IRLL014NTRPBF MOSFET N-CH 55V 2A SOT223 Infineon Technologies	23,163 In Stock	1 : ¥5.34000 Cut Tape (CT) 2,500 : ¥2.03918 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	2A (Ta)	4V, 10V	140mOhm @ 2A, 10V	2V @ 250µA	14 nC @ 10 V	±16V	230 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SIRA14DP-T1-GE3 MOSFET N-CH 30V 58A PPAK SO-8 Vishay Siliconix	2,714 In Stock	1 : ¥5.42000 Cut Tape (CT) 3,000 : ¥2.07371 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	58A (Tc)	4.5V, 10V	5.1mOhm @ 10A, 10V	2.2V @ 250µA	29 nC @ 10 V	+20V, -16V	1450 pF @ 15 V	-	3.6W (Ta), 31.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.